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APTC80H29SCTG
Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
VBUS CR1A CR3A
VDSS = 800V RDSon = 290m max @ Tj = 25C ID = 15A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features *
G3 S3
Q1
CR1B
CR3B
Q3
G1 S1 CR2A OUT1 OUT2 CR4A
Q2
CR2B
CR4B
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
Q4
G2 S2 NTC1 0/VBUS NTC2
G4 S4
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
G3 S3
G4 S4
OUT2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC80H29SCTG - Rev 2 July, 2006
Benefits * Outstanding performance at high frequency operation 0/VBUS VBUS * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance S1 NTC2 S2 * Solderable terminals both for power and signal for G1 NTC1 G2 easy PCB mounting * Low profile * RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 800 V Tc = 25C 15 ID Continuous Drain Current A Tc = 80C 11 IDM Pulsed Drain current 60 VGS Gate - Source Voltage 30 V RDSon Drain - Source ON Resistance 290 m PD Maximum Power Dissipation Tc = 25C 156 W IAR Avalanche current (repetitive and non repetitive) 17 A EAR Repetitive Avalanche Energy 0.5 mJ EAS Single Pulse Avalanche Energy 670
OUT1
APTC80H29SCTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V
3
Max 25 250 290 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 15A Inductive switching @125C VGS = 15V VBus = 533V ID = 15A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 15A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 15A, R G = 5
Min
Typ 2254 1046 54 91 12 46 10 13 83 35 146 139 255 171
Max
Unit pF
nC
ns
J J
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 30A IF = 60A IF = 30A Tj = 125C Tj = 25C IF = 30A VR = 133V
di/dt = 200A/s
Min 200 Tj = 25C Tj = 125C Tc = 85C
Typ
Max 250 500
Unit V A A
0.9 24 48 33 150 ns nC
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 125C Tj = 25C Tj = 125C
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APTC80H29SCTG - Rev 2 July, 2006
30 1.1 1.4
1.15 V
APTC80H29SCTG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 5A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 1200 Typ 50 100 5 1.6 2.6 14 45 33 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.8 1.2 2.5 150 125 100 4.7 160 Typ 50 3952 Max Max 200 1000 1.8 3.0 Unit V A A V nC pF
IF = 5A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g Unit k K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
AL L DIMENSIONS MARKED " * " ARE TOLERE NCED A S :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTC80H29SCTG - Rev 2 July, 2006
APTC80H29SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 40 35 I D, Drain Current (A) 30 25 20 15 10 5 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 5 10 15 20 I D, Drain Current (A) 25 30
VGS=20V VGS=10V
Transfert Characteristics 50
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle T J=-55C
VGS=15&10V
6V 5.5V 5V 4.5V 4V
ID, Drain Current (A)
6.5V
40 30 20 10 0 0
TJ =125C TJ =25C TJ =125C T J=-55C
1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V)
8
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 16 I D, DC Drain Current (A) 14 12 10 8 6 4 2 0 25 50 75 100 125 150
APTC80H29SCTG - Rev 2 July, 2006
Normalized to V GS=10V @ 7.5A
TC, Case Temperature (C)
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APTC80H29SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 10000
Ciss
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 7.5A
100
limited by RDSon
10
100s
1ms
1
Single pulse TJ =150C TC=25C 1
100ms
0 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 Gate Charge (nC)
APTC80H29SCTG - Rev 2 July, 2006
VDS=640V ID=15A T J=25C V DS =160V VDS=400V
C, Capacitance (pF)
1000
Coss
100
Crss
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTC80H29SCTG
Delay Times vs Current Rise and Fall times vs Current
100
td(off)
50 40
tr and t f (ns)
V DS=533V RG=5 T J=125C L=100H
td(on) and td(off) (ns)
tf
80 60 40 20 0 5 10 15 20 I D, Drain Current (A)
Switching Energy vs Current
30 20 10 0
VDS=533V RG=5 T J=125C L=100H
tr
td(on)
25
5
10 15 20 I D, Drain Current (A)
25
Switching Energy vs Gate Resistance
500
Eon and Eoff (J)
400 300 200 100 0 5
Switching Energy (J)
VDS=533V RG=5 TJ=125C L=100H
1250 Eon 1000 750 500 250
V DS=533V ID=15A T J=125C L=100H
Eoff
Eoff
Eon Eoff
0 10 15 20 ID, Drain Current (A) 25 0 10 20 30 40 Gate Resistance (Ohms) 50
Operating Frequency vs Drain Current
350
Frequency (kHz)
300 250 200 150 100 50 0 4
V DS=533V D=50% R G=5 T J=125C T C=75C
ZCS
ZVS
IDR , Reverse Drain Current (A)
400
Source to Drain Diode Forward Voltage 1000
100 TJ =150C 10 TJ=25C 1 0.2 0.6 1 1.4 1.8 V SD, Source to Drain Voltage (V)
APTC80H29SCTG - Rev 2 July, 2006
Hard Switching
6
8 10 12 ID, Drain Current (A)
14
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APTC80H29SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 Thermal Impedance (C/W) 2.5 2 1.5 1 0.5 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Forward Characteristics
T J=25C
Reverse Characteristics
10
IF Forward Current (A)
200
IR Reverse Current (A)
8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
TJ=75C
150 100 50 0 400
TJ=125C TJ=175C
T J=75C TJ=125C T J=175C T J=25C
600
800 1000 1200 1400 1600 VR Reverse Voltage (V)
400 C, Capacitance (pF) 300 200 100 0 1 10 100 VR Reverse Voltage 1000
APTC80H29SCTG - Rev 2 July, 2006
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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